Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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The lowest- and the second-lowest band minima in the conduction band of these materials are denoted as K- and Q-valleys. Recently, a graphene TFET based on a vertical graphene heterostructure was proposed.

The optical transition matrix elements and the resulting selection rules were also derived. In this structure source and drain are composed of a monolayer of graphene ppurfath hexagonal boron nitride h-BN is used as a tunneling barrier.

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Mahdi Pourfath was born in Tehran, Iran, in The electronic band-structure of GNRs depends on the nature of their edges, which can be zigzag or armchair. Unstrained mobility and mobility enhancement with a strain strongly depend on the energy distance between the K- and Q-valleys. Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction. All simulations were based on the assumption of cylindrical symmetry. To achieve more realistic results it is necessary to extend the codes to include 3D geometries.

In these structures tunneling between source and drain is controlled by the gate-source voltage. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high carrier mobility.

Exceptional electronic and mechanical properties together with nanoscale diameters make carbon nanotubes CNTs candidates for nanoscale field effect transistors FETs. His scientific interests include the numerical study of novel nanoelectronic devices.


We have shown that by appropriately selecting the gate-source and gate-drain spacer lengths we can improve not only the ambipolar behavior and static characteristics but also the dynamic characteristics of the device. Mahdi Pourfath MSc Dr. In order to study the static operation of these devices more deeply, we plan to include scattering into our simulations, which can be achieved by using Buetikker probes.

The Best Books of All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained.

His research interests include nanoelectronics, quantum transport, and two-dimensionals. Mahdi Pourfath was born in Tehran, Iran, in The quasi-static approximation QSA was used to investigate the dynamic response of these devices. We use cookies to give you the best possible experience. Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach.

mehdi pourfath,

Product details Format Paperback pages Dimensions x x Their electronic properties exhibit a dependence on the ribbon direction and width. Mahdi Jahdi MSc Dr. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and the venia docendi in microelectronics in March GNRs have recently attracted much interest as they are recognized as promising building blocks for nano-electronic devices. He studied electrical engineering at the Sharif University of Technology, where he received the MSc degree in In short devices less than nm carrier transport through the device is nearly ballistic.

Other books in this series. Hierarchical Device Simulation Christoph Jungemann. Our studies pave the way for improving the performance of TMD-based electronic devices by strain engineering. Home Contact Us Help Free delivery worldwide. Looking for beautiful books? The results indicate that a tensile strain increases mobility, whereas a opurfath strain reduces mobility. A small tensile strain has a higher impact on the mobility of materials with a smaller energy distance between the valleys, such as MoSe 2 and WSe 2.


Monolayer and bilayer graphene has been utilized as the channel material for Field-Effect Transistors FETswhere the monolayer structure of graphene results in excellent gate control over the channel.

In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires, and low-dimensional thermoelectric devices and photodetectors are discussed.

Mahdi Pourfath

Dispatched from the UK in 4 business days When will my order arrive? He studied electrical engineering at the Sharif University of Technology, where he received the degree magdi Master of Science in There is a good agreement between simulation and experimental results, indicating the validity of the model. Furthermore, it can be inferred from the results that due to the smaller density of states and the resulting smaller quantum capacitance of GNRs as pokrfath to graphene, better switching and frequency response can be achieved for VTGNRFETs.

Computational Single-Electronics Christoph Wasshuber. The device response was studied for a wide range of photon energies.